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贵金属在GaN、SiC欧姆接触中的研究进展 |
Recent progress of precious metals used in Ohmic contact to GaN and SiC |
Received:June 03, 2024 |
DOI: |
中文关键词: 宽禁带半导体 欧姆接触 贵金属 微观结构 接触电阻 |
英文关键词: wide bandgap semiconductor Ohmic contact precious metals microscopic structure contact resistance |
基金项目:云南省重大专项(202102AB080008);云南贵金属实验室项目(YPML-2022050217/YPML-2022050218);云南省技术创新人才项目(202005AD160029) |
Author Name | Affiliation | LI Jingyu | Kunming Institute of Precious Metals, Kunming 650106, China | LI Xin | Kunming Institute of Precious Metals, Kunming 650106, China | WEN Ming | Kunming Institute of Precious Metals, Kunming 650106, China Yunnan Precious Metals Laboratory Co.Ltd., Kunming 650106, China | LI Sixie | Yunnan Precious Metals Laboratory Co.Ltd., Kunming 650106, China | WANG Chuanjun | Kunming Institute of Precious Metals, Kunming 650106, China Yunnan Precious Metals Laboratory Co.Ltd., Kunming 650106, China |
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中文摘要: |
氮化镓(GaN)和碳化硅(SiC)是第三代宽禁带半导体的两种核心材料,具有优异的热稳定性、耐高温性能以及高热导率,在高频功率器件、光电子器件等领域具有广阔的应用前景。欧姆接触是实现半导体器件应用的基础,在提高器件性能、减小电阻损耗、增强稳定性和可靠性等方面发挥着重要作用。本文综述了贵金属在GaN和SiC欧姆接触中的研究进展,讨论了贵金属在欧姆接触中的制备工艺、性能优化方法以及电学、热学等性质间的关系,详细介绍了几种典型贵金属如金、银、铂等在GaN和SiC欧姆接触中的应用和前景。 |
英文摘要: |
Gallium nitride (GaN) and silicon carbide (SiC) are two core materials of third-generation wide bandgap semiconductors, owing to their excellent thermal stability, good high-temperature resistance and high thermal conductivity. They dislpay broad application prospects in high-frequency power devices, optoelectronic devices, and other fields. Ohmic contact, as a foundation for the application of semiconductor devices, plays an important role in improving device performance, reducing resistance loss and enhancing stability and reliability. This article reviews the research progress of precious metals used in GaN and SiC Ohmic contacts, includiung the preparation process, performance optimization methods, and the relationship between electrical, thermal and other properties of precious metals in Ohmic contacts. A detailed introduction to the applications and prospects of several typical precious metals such as gold, silver, platinum, etc. in GaN and SiC Ohmic contacts, are also provided in the review. |
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